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| 1 mosfet mosfet mosfet mosfet 70a 70a 70a 70a 450 450 450 450 500v 500v 500v 500v PD10M441L pd10m440 l p2h10m441l ? p2h10m440 l 1 y~?? grade rating g ? symbol PD10M441L/p2h10m441l pd10m440l/p2h10m440l o? unit 450 500 ???~1? ?y drain-source voltage v dss v gs =0v v ???~1? ?y gate-source voltage v gss ? 20 v duty=50% 70 ) c=25 ? ??? ?v continuous drain current d.c. i d 50 ) c=25 ? a ???? ?v pulsed drain current i dm 140 ) c=25 ? a ? ? total power dissipation p d 500 ) c=25 ? w ?^ ?9 s c? operating junction temperature range t jw 40 ? +150 ? ? - 9 s c? storage temperature range t stg 40 ? +125 ? ? 2000 ? 1y rms isolation voltage v iso z? - ?? ,ac1 ? terminals to base, ac 1 min . v 3.0 ? . ? ? module base to heat sink ???? mounting torque f tor 2.0 z? ? ? bus bar to main terminals n ~ m PD10M441L/440l PD10M441L/440l PD10M441L/440l PD10M441L/440l p2h10m441l/440l p2h10m441l/440l p2h10m441l/440l p2h10m441l/440l ? ? approximate weight :220g ? ? approximate weight :220g ?? ?? ?? ?? ? maximum ratings 108.0 108.0 7 7 ?> $ ? qy & m f d u s j d b m $ i b s b d u f s j t u j d t? 5 $ 1 ? v o m f t t p u i f s x j t f o p u f e yyy $ i b s b d u f s j t u j d g? 4 z n c p m yyye $ p o e j u j p o ? q ?7 g . b y j n v n 7 b m v f o? 6 o j u 7 ? . j o a j 5 z q 7 g . b y ??? ? ?v ; f s p ( b u f 7 p m u b h f % s b j o $ v s s f o u * % 4 4 7 % 4 1 7 % 4 4 7 ( 4 1 7 7 7 n " ???~1?`vm ? ?y ( b u f 4 p v s d f 5 i s f t i p m e 7 p m u b h f 7 ( 4 u i 7 % 4 1 7 ( 4 * % 1 n " 7 ???~1?? ?v ( b u f 4 p v s d f - f b l b h f $ v s s f o u * ( 4 4 7 ( 4 1? 7 7 % 4 1 7 7 7 " ???~1?|? ? . 0 4 ' & 5 ? 4 u b u j d % s b j o 4 p v s d f 0 o 3 f t j t u b o d f s % 4 p o 7 ( 4 1 7 * % 1 " 7 n q ; a????? ' p s x b s e 5 s b o t d p o e v d u b o d f h g h 7 % 4 1 7 * % 1 " 7 7 4 yyy $ i b s b d u f s j t u j d g? 4 z n c p m yyye $ p o e j u j p o ? q ?7 g . b y j n v n 7 b m v f o? 6 o j u 7 ? . j o a j 5 z q 7 g . b y 1? ?v $ p o u j o v p v t 4 p v s d f $ v s s f o u * 4 % $ 7 7 " ?1? ?v 1 v m t f e 4 p v s d f $ v s s f o u * 4 . 7 7 " ??|?? q ?y % j p e f ' p s x b s e 7 p m u b h f 7 4 % * 4 1 " 7 7 7 os ? 3 f w f s t f 3 f d p w f s z 5 j n f u s s * 4 1 " e j 4 e u1 " t 7 7 o t os ? ?y 3 f w f s t f 3 f d p w f s z $ i b s h f 2 s 7 7 $ 5 k 1 ? 7 % 4 1 7 % 4 4 7 ( 4 1 7 7 7 ??0? * o q v u $ b q b d j u b o d f $ j t t 7 ( 4 1 7 7 % 4 1 7 g1 . ) [ 7 7 o ' z?0? 0 v u q v u $ b q b d j u b o d f $ p t t 7 7 o ' <0? 3 f w f s t f 5 s b o t g f s $ b q b d j u b o d f $ s t t 7 7 o ' 3 j t f 5 j n f u s ???~|? ? 5 v s o 0 o % f m b z 5 j n f u e p o 7 % % 1 7 % 4 4 * % 1 " 7 ( 4 1 7 7 3 ( 1 7 7 o t 7 7 o t ???~|? ? 5 v s o 0 g g % f m b z 5 j n f u e p g g 7 7 o t <? ' b m m 5 j n f u g 7 7 o t yyy $ i b s b d u f s j t u j d g? 4 z n c p m yyye $ p o e j u j p o ? q ?7 g . b y j n v n 7 b m v f o? 6 o j u 7 ? . j o a j 5 z q 7 g . b y ? ? ? ?-? 5 i f s n b m 3 f t j t u b o d f + v o d u j p o u p $ b t f 3 u i k d . 0 4 ' & 5 7 7 ? 8 ? ? ? ?-??k??? 5 i f s n b m 3 f t j t u b o d f $ b t f u p ) f b u t j o l 3 u i d g ????? c . p v o u j o h t v s g b d f g m b u t n p p u i b o e h s f b t f e 7 7 % j p e f 7 7 o ???|?? ~ ? qy 4 p v s d f % s b j o % j p e f 3 b u j o h t b o e $ i b s b d u f s j t u j d t? 5 $ 1 ? v o m f t t p u i f s x j t f o p u f e ? ? ? qy 5 i f s n b m $ i b s b d u f s j t u j d t - 308 - 120 100 80 60 40 20 0 02468 1 0 1 2 drain current i d (a) drain t o source vol t age v ds (v) t c =25 ? 250 s pulse test 10v 4v v gs =5v 6v fig. 1 typical output characteristics 30 24 18 12 6 0 1 2 5 1 0 2 0 5 0 100 cap acit ance c (nf) drain t o source vol t age v ds (v) v gs =0v f=1khz c oss c rss c iss fig. 4 typical capacitance fig. 4 vs. drain-source voltage 1000 500 100 200 50 20 10 2 5 1 0 2 0 5 0 200 100 switching time t (ns) r g =7 v dd =250v t c =25 ? 80 s pulse test t d (off) t d (on) t r t f fig. 7 typical switching time fig. 7 vs. drain current 500 50 200 100 20 10 5 1 2 0.5 1 2 5 10 20 50 100 500 200 1000 drain current i d (a) drain t o source vol t age v ds (v) t c =25 ? t j =150 ? max single pulse 10 s 1ms 10ms dc 100 s -441l -440l operation in this area is limited by r ds (on) fig. 10 maximum safe operating area 12 10 8 6 4 2 0 0 4 8 12 16 drain t o source on vol t age v ds (on)(v) ga te t o source vol t age v gs (v) t c =25 ? 250 s pulse test i d =85a 40a 20a fig. 2 typical drain-source on-voltage fig. 2 vs. gate-source voltage 16 12 8 4 0 0 100 200 300 400 500 600 ga te t o source vol t a ge v gs (v) t o t a l ga te chrage q g (nc) i d =50a 100v 250v 400v v dd = fig. 5 typical gate charge fig. 5 vs. gate-source voltage 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 source current i s (a) source t o drain vol t age v sd (v) 250 s pulse test t j =125 ? t j =25 ? fig. 8 typical source-drain diode forward fig. 8 characteristics 10 -2 2 10 0 5 2 10 -1 5 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 normalized transient thermal impedance [r th(j-c) / r th(j-c) ] pulse dura tion t (s) per unit base r th(j-c) =0.25 ? /w 1 shot pulse fig. 11 normalized transient thermal impedance(mosfet) 0.2 0.1 0 -40 0 4 0 8 0 120 160 drain t o source on vol t age v ds (on)(v) junction tempera ture t j ( ) v gs =10v 250 s pulse test i d =85a 40a 20a fig. 3 typical drain-source on voltage fig. 3 vs. junction temperature 10 5 1 2 0.5 0.2 0.1 2 5 10 20 50 100 200 switching time t ( s) i d =40a v dd =250v t c =25 ? 80 s pulse test series ga te impedance r g ( ) toff ton fig. 6 typical switching time fig. 6 vs. series gate impedance 2000 1000 200 500 100 50 0 100 200 300 400 500 600 reverse recover y time t rr (ns) reverse current i r (a) i s =70a i s =40a t j =150 ? -dis/dt (a/ s) t rr i r fig. 9 typical reverse recovery characteristics m o s f e t |
Price & Availability of PD10M441L
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